Search
Menu
Rocky Mountain Instruments - Laser Optics LB

Cree Licenses Patent on Pendeoepitaxy Process

Facebook X LinkedIn Email
DURHAM, N.C., Aug. 8 -- Cree Inc. said that it had licensed from North Carolina University a patent entitled "Methods of Fabricating Gallium Nitride (GaN) semiconductor Layers by Lateral Growth from Sidewalls into Trenches, and Gallium Nitride Semiconductor Structures Fabricated Thereby." The patent covers process technology known as pendeoepitaxy, or pendeo for short, which refers to a process for growing gallium nitride semiconductor layers with low defect densities. Chuck Swoboda, Cree's president and CEO said, "The issuance of this patent significantly extends Cree's portfolio of...Read full article

Related content from Photonics Media

    Published: August 2001
    News & Features

    We use cookies to improve user experience and analyze our website traffic as stated in our Privacy Policy. By using this website, you agree to the use of cookies unless you have disabled them.