Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
SPECIAL ANNOUNCEMENT
2016 Photonics Buyers' Guide Clearance! – Use Coupon Code FC16 to save 60%!
share
Email Facebook Twitter Google+ LinkedIn Comments

GaN-Free LEDs Offer UV Emission

Photonics Spectra
Mar 2003
Researchers at NTT Basic Research Laboratories and NEL TechnoSupport, both in Atsugi, Japan, have obtained 350-nm emission from a GaN-free, AlGaN single-quantum-well LED. They presented their work in the Jan. 6 issue of Applied Physics Letters.

To improve the extraction efficiency and the external quantum efficiency of the UV LEDs, they replaced the GaN in the structure with AlGaN buffer and contact layers. They fabricated the devices on a sapphire substrate using low-pressure metallorganic vapor phase epitaxy. The final devices displayed an external quantum efficiency of approximately 1.4 percent, with room-temperature CW output of 1 mW at an injection current of 20 mA and a maximum output of 7 mW at 220 mA.


Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2016 Photonics Media
x Subscribe to Photonics Spectra magazine - FREE!