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IBM, Chartered and Infineon Collaborate on 65 nm
Aug 2003
EAST FISHKILL, N.Y., Aug. 7 -- IBM, Chartered Semiconductor Manufacturing and Infineon Technologies AG have announced a joint development agreement to accelerate the move to 65-nm semiconductor manufacturing process technology.

The multiyear engagement combines Infineon's low-power silicon expertise with IBM's process technology and Chartered's efforts to drive a common foundry process platform that scales from 90 nm through next-generation 65-nm technology and provides a path to 45 nm. Financial details of the agreement were not disclosed.

Nearly 200 engineers from the three companies will work together to define industry-leading process technologies for next-generation semiconductors. The work will be conducted in IBM's new E300-mm development lab in Fishkill, N.Y. IBM and Chartered technologies are among the first on 65nm circuits developed and produced in the new facility, called the Advanced Semiconductor Technology Center, or ASTC 300, which began operations last month.

The companies plan to jointly develop a common advanced foundry process at 65nm, as well as variants tuned for high performance and low power. They said they are also exploring extensions to 45-nm technology. To assist foundry customers in designing with these technologies, the companies have also agreed to work together with third-party providers to provide optimized design tools.

Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities. Both IBM and Chartered plan to have the jointly developed 65-nm process installed in their respective 300-mm fabs, and to be in a position to support Infineon's outsourced demand for 65-nm products.

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