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Jmar Awarded $3.1M to Merge X-Ray Masks, Nanolithography

Photonics.com
Aug 2006
SAN DIEGO, Calif., Aug. 16, 2006 -- Jmar Technologies Inc. has received a $3.1 million award from the Naval Air Systems Command (NAVAIR) to continue development of sub-100-nm feature x-ray masks and next-generation nanolithography, to be added to its current $17.5 million contract.

Jmar will use its patented x-ray stepper and point source technologies to develop x-ray masks for fabrication of high-speed C-RAM with 50 to 35 nm features, enabling 16 MB and higher densities for high-priority military and space applications.

Three Jmar x-ray lithography (XRL) stepper systems will be used in the development of these and other next-generation memory devices. The C-RAM program is a joint Navy/Air Force development effort for radiation-hardened, low-power silicon memory devices. The technology has several commercial applications: As memory densities increase, C-RAM will be a faster, lower power replacement for nonvolatile memory applications currently using Flash memory in cell phones, portable computers and solid-state mechanical hard disks.

"This effort, merging world-class x-ray mask technology with nanolithography, will provide practical applications for everyday use, while supporting important military and commercial development programs," said Neil Beer, president and CEO of Jmar. "The ongoing development of XRL nanotechnology through government funding demonstrates the growing number of applications for our technology products and legacy pipeline."

Jmar makes laser-based technology and x-ray processes for nanoscale imaging, analysis and fabrication.

For more information, visit: www.jmar.com


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