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Integrated Germanium-on-Silicon Detector Opens the Eye at 40 Gb/s

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1550-nm light is evanescently coupled from Si waveguide into Ge.

Breck Hitz

While one company’s approach to integrated silicon-germanium photodetectors is described in detail in the feature on page 74 of this issue, Mario J. Paniccia and his Intel Corp. colleagues in Santa Clara, Calif., and in Jerusalem have taken a different approach, fabricating germanium-on-silicon photodetectors with 29.4-GHz bandwidth and 93 percent quantum efficiency. The product of these two parameters is a meaningful measure of a detector’s merit, and the Intel researchers believe that their number — 27.3 GHz — is the highest yet reported for a Ge photodetector at 1550 nm. Figure 1....Read full article

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    Published: December 2007
    Ge photodetectorintegrated silicon-germanium photodetectorsparametersResearch & TechnologySensors & Detectors

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