The Institute of Electrical and Electronics Engineers Inc. (IEEE) has named James J. Coleman as recipient of the 2008 IEEE David Sarnoff Award for his contributions to the development of reliable strained-layer lasers used to improve the performance of fiber optic telecommunications systems. Coleman's most notable contribution to the field of optoelectronics is his work on strained-layer quantum-well lasers. Coleman and his group proved that both performance and reliability were higher using strained-layers in lasers. This discovery enabled development of the 980-nm pump laser used in a variety of technologies, particularly as a pump laser for erbium-doped optical amplifiers used by telecommunication companies to increase the capacity of networks without having to lay additional fiber optic cable. An IEEE Fellow, Coleman began his career at the U of I as a research associate, and then moved on to technical staff positions at both Bell Laboratories and Rockwell International. While at Rockwell, Coleman contributed to the development of the metalorganic chemical vapor deposition (MOCVD) growth method used in semiconductor and photonic devices found in commercial compact disc and high-power lasers for optical storage and medical applications. In 1982, he returned to the university as professor of electrical and computer engineering. Coleman has co-authored 375 journal publications and holds seven patents. He is a Fellow of the American Physical Society, American Association for the Advancement of Science and Optical Society of America. The IEEE David Sarnoff Award, sponsored by Sarnoff Corp., will be presented to Coleman Nov. 10 at the LEOS Annual Meeting in Newport Beach, Calif.