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NSF Award for Deep UV LEDs

Photonics.com
Feb 2010
COLUMBIA, S.C, Feb. 12, 2010 – Sensor Electronic Technology Inc. (SETI), announced that is has been awarded a Phase II SBIR award from the National Science Foundation (NSF) for $500,000 to further advance its Deep Ultraviolet (DUV) LEDs with novel proprietary and patent pending approach for High Quality p-cladding Layers for enhanced output power and light extraction.

This Phase II project will develop and commercialize next-generation high-power DUV LEDs in UV-B spectral range. The project aims to improve the LED efficiency and lifetime by improvements in the material quality, doping, and device design that will lead to low-cost, high power semiconductor DUV radiation sources with wall plug efficiency exceeding 59 percent and operation lifetimes greater than 5,000 hours.

Deep UV LEDs are available from SETI today at wavelengths of 240 nm to 400nm and are primarily used in medical, bio-analytical, sensing, and homeland security markets. The enhancements targeted in this project will lay the groundwork for large-scale penetration of high volume markets, such as global sanitation and disinfection.

Once operating at this level of performance, deep UV LEDs offer an environmentally friendly UV light source without the scrap and toxicity issues surrounding conventional mercury based lamps.

The NSF SBIR program’s mission is to increase the incentive and opportunity for small firms to undertake cutting edge, high risk, high quality scientific, engineering, or science and engineering education research that would have potential of high economic payoff if the projects are successful.

For more information, visit: www.s-et.com  


GLOSSARY
doping
The addition of impurities to another substance, usually solid, in a controlled manner that produces desired properties. Silicon doping with small amounts of other semimetallic elements increases the number of electrical carriers.
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