Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
SPECIAL ANNOUNCEMENT
2016 Photonics Buyers' Guide Clearance! – Use Coupon Code FC16 to save 60%!
share
Email Facebook Twitter Google+ LinkedIn Comments

New Ultrathin Solar Blind EUV Imager

Photonics.com
Dec 2010
SAN FRANCISCO, Dec. 14, 2010 — At the International Electron Devices Meeting this week, the Interuniversity Microelectronics Centre (IMEC) presented an ultrathin hybrid AlGaN-on-silicon extreme ultraviolet (EUV) imager with a 10-µm pixel-to-pixel pitch. The wide-bandgap AlGaN provides insensitivity to visible wavelengths and enhanced UV radiation hardness compared to silicon. Backside illumination in a hybrid design was used to achieve the very small pitch. The novel imager shows an excellent detection down to a wavelength of 1 nm.

Ultraviolet detection is of particular interest for solar science, EUV microscopy and advanced EUV lithography tools. Sensors using wide-bandgap materials overcome the drawbacks of silicon-based sensors such as their sensitivity to UV radiation damage and the need for filters to block the unnecessary visible and infrared radiation.

IMEC’S backside-illuminated EUV imager is based on a state-of-the-art hybrid design integrating an AlGaN sensor on a silicon readout chip. A submicron-thick AlGaN layer was grown on a Si(111) wafer using molecular beam epitaxy and a focal plane array of 256 × 256 pixels with a 10-μm pitch was processed. Each pixel contains a Schottky diode optimized for backside illumination. A custom read-out chip, based on capacitance transimpedance amplifiers, was fabricated in 0.35-µm CMOS technology. The AlGaN wafer and read-out chip were postprocessed with indium solder bumps also with 10-µm pitch, achieving excellent uniformity. The focal plane array and read-out chip were assembled using flip-chip bonding and subsequently the silicon substrate was locally removed to enable backside illumination of the active AlGaN layer. Finally, the imager was packaged and wire-bonded.

These results were obtained in collaboration with Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications/Centre National de la Recherche Scientifique (CRHEA/CNRS) of France and the Royal Observatory of Belgium in the framework of the BOLD project of the European Space Agency.

For more information, visit: www2.imec.be




GLOSSARY
bandgap
In a semiconductor material, the minimum energy necessary for an electron to transfer from the valence band into the conduction band, where it moves more freely.
Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2016 Photonics Media
x We deliver – right to your inbox. Subscribe FREE to our newsletters.