VIS Offers QD Laser Epitaxial Wafer
BERLIN, Jan. 28, 2011 — VI Systems GmbH (VIS) has developed a universal epitaxial growth technique for high-density InAs-GaAs-based quantum dots (QDs) that is applicable to QD lasers and other advanced devices.
QD lasers operating at 1300 nm are known to reach very high transmission speeds of up to 25 Gb/s at very low power consumption. They also demonstrate low linewidth enhancement factor and are suitable for applications ranging from fiber-to-the-home networks to frequency conversion, mode-locking and microwave generation.
A unique technology permits the realization of threshold current density of ~4 A/cm2 per QD layer in multistack QD lasers in broad-area and narrow-stripe devices. The company offers wafers based on foundry-based epitaxial growth.
VI Systems GmbH is a fabless developer and manufacturer of optical engines and optoelectronic components for communication, industrial and consumer applications.
For more information, visit: www.v-i-systems.com