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VIS Offers QD Laser Epitaxial Wafer

Photonics.com
Jan 2011
BERLIN, Jan. 28, 2011 — VI Systems GmbH (VIS) has developed a universal epitaxial growth technique for high-density InAs-GaAs-based quantum dots (QDs) that is applicable to QD lasers and other advanced devices.

QD lasers operating at 1300 nm are known to reach very high transmission speeds of up to 25 Gb/s at very low power consumption. They also demonstrate low linewidth enhancement factor and are suitable for applications ranging from fiber-to-the-home networks to frequency conversion, mode-locking and microwave generation.

A unique technology permits the realization of threshold current density of ~4 A/cm2 per QD layer in multistack QD lasers in broad-area and narrow-stripe devices. The company offers wafers based on foundry-based epitaxial growth.

VI Systems GmbH is a fabless developer and manufacturer of optical engines and optoelectronic components for communication, industrial and consumer applications.

For more information, visit: www.v-i-systems.com 



GLOSSARY
wafer
A cross-sectional slice cut from an ingot of either single-crystal, fused, polycrystalline or amorphous material that has refined surfaces either lapped or polished. Wafers are used either as substrates for electronic device manufacturing or as optics. Typically, they are made of silicon, quartz, gallium arsenide or indium phosphide.
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