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Bridgelux Demonstrates New Level for GaN-on-Si LEDs

Photonics.com
Aug 2011
LIVERMORE, Calif., Aug. 23, 2011 — LED light technology and solutions provider Bridgelux Inc. announced it has broken its previous industry record for highest lumen per watt values for gallium nitride on silicon (GaN-on-Si).

Using proprietary buffer layer technology, the company demonstrated growth of crack-free GaN layers on 8-in. silicon wafers without bowing at room temperature.

The company said its LED performance levels are comparable to today’s state-of-the-art sapphire-based LEDs. Its cool-white LEDs showed efficiencies as high as 160 lm/W at a correlated color temperature of 4350 K. Warm-white LEDs constructed from the GaN-on-Si chips delivered 125 lm/W at a color temperature of 2940 K and color rendering index of 80.

By growing GaN on larger, low-cost silicon wafers that are compatible with modern semiconductor manufacturing, the company believes that it can deliver a 75% improvement in cost over current approaches.

For more information, visit: www.bridgelux.com  



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