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Bridgelux Demonstrates New Level for LEDs

Photonics Spectra
Nov 2011
LED light technology provider Bridgelux Inc. of Livermore, Calif., has broken its record for highest lumen per watt values for gallium nitride on silicon (GaN-on-Si). Using buffer layer technology, the company showed growth of crack-free GaN layers on 8-in. silicon wafers without bowing at room temperature. It said its LED performance levels are comparable to state-of-the-art sapphire-based LEDs. Its cool-white LEDs showed efficiencies of 160 lm/W at a correlated color temperature of 4350 K. Warm-white LEDs constructed from the GaN-on-Si chips delivered 125 lm/W at a color temperature of 2940 K and a color rendering index of 80.



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