LED light technology provider Bridgelux Inc. of Livermore, Calif., has broken its record for highest lumen per watt values for gallium nitride on silicon (GaN-on-Si). Using buffer layer technology, the company showed growth of crack-free GaN layers on 8-in. silicon wafers without bowing at room temperature. It said its LED performance levels are comparable to state-of-the-art sapphire-based LEDs. Its cool-white LEDs showed efficiencies of 160 lm/W at a correlated color temperature of 4350 K. Warm-white LEDs constructed from the GaN-on-Si chips delivered 125 lm/W at a color temperature of 2940 K and a color rendering index of 80.