HILLSBORO, Ore., Aug. 12, 2012 — FEI has launched the Verios extreme-high-resolution scanning electron microscope (SEM), which provides the subnanometer resolution and enhanced contrast needed for precise measurements on beam-sensitive materials in advanced semiconductor manufacturing and materials science applications.
When combined with proprietary IC3D software, the Verios provides the precise measurements needed to control processes at the 22-nm technology node and below.
For materials scientists, it enables new insights by extending subnanometer imaging and characterization to novel materials being developed, allowing researchers to capture the high-resolution, high-contrast images required without the need to transition to transmission electron microscope or other imaging techniques.
At low kilovolts, where the performance of conventional SEM degrades, the Verios system’s advanced optics deliver sensitivity to surface detail. The user can switch quickly between various operating conditions, maintain sample cleanliness and obtain subnanometer resolution at any accelerating voltage from 1 to 30 kV.
Optimized signal collection and advanced filtering abilities not only provide higher and more flexible contrast generation, but also allow for a greater range of samples to be investigated. Many beam-sensitive or nonconductive materials can now be accurately observed at the nanoscale, without any preparation.
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