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Bridgelux Selling GaN-on-Si Tech to Toshiba

Photonics.com
Apr 2013
LIVERMORE, Calif., and TOKYO, April 23, 2013 — LED lighting technologies manufacturer Bridgelux Inc. has announced that it will sell its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Toshiba Corp. Terms of the agreement were not disclosed.

The deal expands a licensing and manufacturing partnership the companies signed last year. Toshiba previously demonstrated an 8-in. GaN-on-Si LED wafer and mass production of white LEDs using Bridgelux’s crystal growth and LED device technologies, along with Toshiba’s advanced silicon processes and manufacturing technologies.

“Entering a new phase of relationship with Bridgelux, we will be able to accelerate the scaled manufacturing of 8-in. GaN-on-silicon LED wafers, which will position both companies for strong growth in respective LED businesses,” said Makoto Hideshima, corporate vice president of Toshiba and executive vice president of Toshiba Semiconductor and Storage Products Co. The technology also will provide “a breakthrough for power devices development and production.”

The GaN-on-Si assets included in the sale and the related Bridgelux employees will remain on-site at the company’s Livermore headquarters after the deal closes.

For more information, visit: www.bridgelux.com or www.toshiba.com



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