NEWBURY PARK, Calif., Oct. 10, 2013 — Opto Diode, a member of the ITW Photonics Group, has released the UVG20C, a 20-mm2
photodiode with a circular active area for electron detection.
The absence of a surface dead region results in 100 percent collection efficiency. The radiation-hard, junction-passivating oxynitride protective entrance window makes the device better suited than conventional silicon photodiodes for space missions and/or satellite applications (<2% responsivity degradation after megajoules per square centimeter of 254-nm and tens of kilojoules per square centimeter of 193-nm photon exposure).
The device features a rise time of 1.7 µs (typical), a minimum rise time of 0.8 µs and a maximum of 3.3 µs. The shunt resistance is 200 MΩ (typical), 50 MΩ (minimum), and the typical capacitance is 4 nF and maximum 10 nF. Housed in a TO-8 package, it offers peak responsivity of 800 nm at ~0.56 A/W.
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