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Plessey Wins £1.3M Grant for LED Development

Photonics.com
Jul 2015
PLYMOUTH, England, July 14, 2015 — Plessey Semiconductors Ltd. will lead a £1.3 million (about $1.1 million) U.K. grant to accelerate high-volume manufacturing of LEDs created with GaN-on-silicon technology.

Wafers
GaN-on-silicon wafers. Courtesy of Plessey Semiconductors Ltd.
 
Project partners are Aixtron Ltd. of Cambridge and Bruker U.K. Ltd.'s Nano Surfaces Division of Coventry.

"These improvements are required as part of our move to 200-mm silicon substrates," said Plessey Chief Technology Officer Keith Strickland. "A 200-mm wafer has almost twice the usable area of our existing 150-mm wafers and therefore will almost double the number of LEDs produced for the same relative cost."

The grant was awarded under the Advanced Manufacturing Supply Chain Initiative, a funding competition designed to improve the global competitiveness of U.K. advanced manufacturers.



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