Ushio, TNO partner for EUV Lithography
TOKYO, Feb. 29, 2016 — Light source manufacturer Ushio Inc. has announced a strategic partnership with the Netherlands Organization for Applied Scientific Research (TNO), aiming at the development of extreme UV lithography for next-generation semiconductor manufacturing.
TNO and Ushio are building an experimental EUV exposure and analysis facility to study radiation induced effects on EUV optics and reticles. The new facility, EBL2, will support the common goal of understanding of contamination effects on surfaces under all EUV radiation condition. The aim is to speed up the development of next-generation lithography systems, masks and pellicles.
The Ushio high-intensity laser-assisted discharge-produced plasma EUV light source will provide pulsed EUV in a well-controlled environment similar to lithography system conditions. Sample handling and transport will be automated and have cleanliness levels equal to semiconductor standards for EUV production.
UV mask technology is critical for the commercialization of EUV lithography and the development of EUV mask inspection tools such as actinic blank inspection and actinic pattern inspection. Ushio aims to provide support to the mask inspection process of device manufacturers, as well as mask makers.
Ushio is a manufacturer of lamps, lasers and LEDs, in UV, VIS and IR. TNO is an independent organization that connects companies and professionals for economic and social development.
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