Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
SPECIAL ANNOUNCEMENT
2016 Photonics Buyers' Guide Clearance! – Use Coupon Code FC16 to save 60%!
share
Email Facebook Twitter Google+ LinkedIn Comments

Researchers Grow Single-Crystal, 1.55µm VCSELs

Photonics Spectra
Dec 2000
Researchers at the University of California in Santa Barbara have produced 1.55-µm vertical-cavity surface-emitting lasers (VCSELs) for telecommunications applications as a single crystal by molecular beam epitaxy. The process is more reliable and less expensive than wafer fusion, which assembles long-wavelength VCSELs from layers that are grown on different wafers.

Team leader Larry Coldren, director of the Optoelectronics Technology Center at the university, determined that indium phosphide, rather than the more common gallium arsenide, offers a better lattice constant for the antimony-containing layers of the devices. The researchers deposited the layers on a 2-in. substrate of indium phosphide and isolated the active regions by etching to yield 25,000 VCSELs per wafer.


Comments
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2016 Photonics Media
x Subscribe to Photonics Spectra magazine - FREE!