CARDIFF, England, and SANTA BARBARA, Calif., March 13, 2014 — A new epitaxial wafer technology is moving forward the next generation of quantum dot lasers on silicon substrates. IQE, in conjunction with researchers from the University of California, Santa Barbara, has developed the technology, which essentially enables the integration of photonics devices with silicon technology for high-volume data communication applications on ultralow-cost platforms. The researchers created a new quantum dot laser design grown on silicon that demonstrated performance as effective as similar lasers grown on their native substrates. Molecular beam epitaxy (MBE) growth technology is used to produce compound semiconductor quantum dots on silicon substrates, a process that is key to cost-effective integration. IQE provided the silicon substrates and the III-V MBE template growth. The researchers believe this new technology will ultimately lead to mass adoption of silicon photonics. It further offers the potential for integration of sophisticated laser devices with traditional low-cost CMOS driver and waveguide technology. The team presented its findings this week at the OFC Conference and Exposition in San Francisco. For more information, visit: www.ucsb.edu.