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Sensors & Detectors
CMOS
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Photodiodes
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KP
MP
GP
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Multispectral
MWIR
NIR
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36 products
Sensors & Detectors
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LiTaO3 Multi Channel Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
LiTaO3 Single Channel Pyroelectric Detector
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Differential Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
DLaTGS Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
IR Detector - BXT2S-68T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
1KP
Sensor Width:
12.5
Sensor Height:
12.5
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
FPA0640P15F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0640P15F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
SWIR
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0320P30F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318x254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
FPA0320P30F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.32MP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
346
Light Spectrum:
SWIR
Effective Pixel Array:
318×254
Operating Temperature:
+71~-40°C
Outputs:
1/2/4
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Light Spectrum:
SWIR
Aperture Size:
Ø 200 μm
Package Type:
TO-46 / 5P
Spectral Range:
0.95 - 1.65 μm
CMOS/Microelectronics
CMC Microsystems
Type:
CMOS
HI-Q™ OEO
OEwaves Inc.
Type:
Other
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
LGD Compact
Axetris AG
Type:
IR
Sensor Width:
50
Sensor Height:
163
Light Spectrum:
NIR
Target Gas:
CH4/C2H6
Target Gas:
CH4/CO2
Target Gas:
CH4
SWS62231
Si-Ware Systems Inc.
Type:
IR
Sensor Width:
10
Sensor Height:
10
Light Spectrum:
NIR
FPA640x512_P15-TEx (Badger-Tx)
ANDANTA GmbH
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
25.4
Sensor Height:
7.3
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
350
Light Spectrum:
NIR,SWIR
Cooler:
1- or 2- stage cooler
Package Type:
28p metal SDIP
Pixel Pitch:
15 μm × 15 μm
Series 9 Avalanche Photodiode
First Sensor Inc.
Type:
Other
Light Spectrum:
VIS,NIR
Wavelenght Range:
750 to 930 nm
FPA320x256-K
ANDANTA GmbH
Type:
InGaAs
Max. Resolution:
82KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
356
Light Spectrum:
NIR,SWIR
Package Type:
28-pin metal DIP package
Pixel Size:
30 μm × 30 μm
Spectral Range:
0.9 μm - 1.7 μm
FPA320x256-K-2.2-TE2
ANDANTA GmbH
Type:
InGaAs
Max. Resolution:
82KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
356
Light Spectrum:
NIR,SWIR
Package Type:
28-pin metal DIP package
Pixel Pitch:
30 μm × 30 μm
Spectral Range:
1.2 μm - 2.2 μm
BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.
Type:
InGaAs
Max. Resolution:
200MP
Light Spectrum:
XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth:
200MHz
Material type:
InGaAs/Si
APD10G1
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Optical damage threshold:
up to +5 dBm
Receiver sensitivity:
–34.5 dBm
Responsivity:
10 A/W
PQS40A-L
Albis Optoelectronics AG
Type:
Photodiodes
Light Spectrum:
NIR
Bandwidth:
40 GHz
Responsivity:
0.8 A/W
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
Mulit-Element Arrays
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Linear
Light Spectrum:
UV,VIS,NIR
UV-Enhanced:
A5V-35UV
High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR
350 to 1100:
nm
Package:
TO=46
Peak Responsivity:
0.50A/W @ 800 nm
4x4 Silicon Array Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Scan Type & Rate:
Area
Light Spectrum:
VIS,NIR
Active Area:
1.96 mm²
Capacitance:
75
Dimensions:
1.4 x 1.4 mm
Nd:YAG 1064-nm Optimized Photodetectors
OSI Optoelectronics Inc.
Type:
IR
Light Spectrum:
VIS,NIR
5 to 14 mm Active area:
diameters
Nd:YAG:
sensitivity
Sensors & Detectors Products
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