Abbreviations/Acronyms: M

milliampere (or milliamp in English) which represents one thousandth, i.e. 10-3, of the SI unit for electric current that is the ampere (also commonly referred to as amp).

milliamperes-second - unit measure of electric charge acquired when multiplying the electric current in milliamperes (one thousandth or 10-3 of the standard unit for electric current the ampere) by the time in seconds. It is commonly used to describe the length of time that electrons are produced or passed through a given circuitry.

molecular beam epitaxy — A well-controlled thin film technique for growing films with good crystal structure in ultra high vacuum environments at very low deposition rates. MBE is also commonly used in the manufacture of semiconductor devices and solar cells.

millicandela — The millicandela is equivalent to one thousandth (or 10-3) of the standard unit of luminous intensity that is the candela, which is the power emitted by a given light source in a particular direction.

modulation contrast microscopy; multichip module — modulation contrast microscopy is a unique illumination technique that enhances contrast in an imaging microscope by converting optical gradients into variations in light intensity. Modulation contrast microscopy is found most commonly in live cell imaging, polarization microscopy, phase contrast, and oblique illumination of stained, unstained and birefringent specimens. A multichip module is an electronic packaging system where multiple discrete electronic components (integrated circuits, semiconductor diodes, etc.) are packaged in various ways onto a single substrate.

mercury cadmium telluride — Mercury cadmium teluride (HgCdTe) is a specific alloy combination that allows one to obtain any optical absorption bandgap of the material between 0 and 1.5 electron volts (eV) making it completely transparent at photon energies and wavelengths below the energy gap in the infrared.

magnetic Czochralski process — Introduction of an external magnetic field in the Czochralski melting process for crystal growth in order to influence the flow and dampen the amplitudes of the melt oscillations that occur in the process. This is accomplished when the external magnetic field generates an electric field inside the melt, which further induces an internal magnetic field in the now electrically conducting melt. The amplitudes of the now induced electric and magnetic fields can be controlled by the strength of the external magnetic field allowing control of the MCZ process.

molecular electronics for radar applications

molecular infrared track

monolothic microwave integrated circuit

metallorganic molecular beam epitaxy