Photonics Dictionary: M

metal-oxide semiconductor

metal-oxide semiconductor field-effect transistor

milliampere (or milliamp in English) which represents one thousandth, i.e. 10-3, of the SI unit for electric current that is the ampere (also commonly referred to as amp).

milliamperes-second - unit measure of electric charge acquired when multiplying the electric current in milliamperes (one thousandth or 10-3 of the standard unit for electric current the ampere) by the time in seconds. It is commonly used to describe the length of time that electrons are produced or passed through a given circuitry.

molecular beam epitaxy — A well-controlled thin film technique for growing films with good crystal structure in ultra high vacuum environments at very low deposition rates. MBE is also commonly used in the manufacture of semiconductor devices and solar cells.

modulation contrast microscopy; multichip module — modulation contrast microscopy is a unique illumination technique that enhances contrast in an imaging microscope by converting optical gradients into variations in light intensity. Modulation contrast microscopy is found most commonly in live cell imaging, polarization microscopy, phase contrast, and oblique illumination of stained, unstained and birefringent specimens. A multichip module is an electronic packaging system where multiple discrete electronic components (integrated circuits, semiconductor diodes, etc.) are packaged in various ways onto a single substrate.

modified chemical vapor deposition

metal-dielectric multilayer (MDM) — Periodic nanofilm structures for optical mode confinement and tunneling of resonant surface plasmons.