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Zurich Instruments AG - Lock-In Amplifiers 4/24 HP

48 products

Sensing & Detection

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AKD Electronic Autocollimator
Vermont Photonics Technologies Corp.

Type: Equipment
Accuracy: ±0.8 - ±5 arcsec
Focal Length: 90 - 500mm

ELCOMAT 5000
Vermont Photonics Technologies Corp.

Type: Equipment
Accuracy over 20" range: ±0.1 arcsec
Accuracy over total range: ±0.25 arcsec
Focal length: 300 mm

SiC UV Detectors for Highr High Energy UV
Electro Optical Components Inc.

Type: Component
Responsivity: 0.13 A/W peak
Spectral Response: 210 - 360nm

High Resolution Digital PIDs for VOCs
Electro Optical Components Inc.

Type: Component

FEMTO OE-300 High Speed Photoreceiver
Electro Optical Components Inc.

Type: Equipment
High Speed: 200MHz
Low Noise: As low as 76fW
Variable Gain: 10^2 to 10^8 V/A

Fluo Sens Fluorescence Sensing Module
Electro Optical Components Inc.

Type: Equipment

FEMTO DLPVA-101-B, -F & -BLN
Electro Optical Components Inc.

Type: Equipment

BASICevo Broadband Pro NDIR
Electro Optical Components Inc.

Type: Other
Max. Resolution: 2000
Sensor Width: 37
Sensor Height: 30
Light Spectrum: MWIR

Semi Check
MoviTHERM, Thermography Solutions

Type: System
Effective on: low emissivity targets
Lens Options: Multiple, for wide angle and close-up imaging
Non-contact: irNDT

Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics

Type: Other

Acousto Optic Frequency Shifter
CSRayzer Optical Technology Co. Ltd.

Type: Component
Frequency: 80-150 MHz
Max. Rise-Time/Fall-Time(10%-90%): 60 S
Signal Wavelength (λc): 1550 nm

MEMS VOA
CSRayzer Optical Technology Co. Ltd.

Type: Component
Attenuation Range: 0 ~ 40dB
Attenuation Type: Dark or Bright
Driving Power: <5 μw

Microscopy Temperature Control System
Boston Electronics Corp.

Type: Equipment

S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation

Type: CMOS
Max. Resolution: 2KP
Scan Type & Rate: Linear
kHz at Max. Res.: 10000
Light Spectrum: UV,VIS,NIR,SWIR
Number of Pixels: 2048
Pixel Size: 14 µm x 200 µm
Spectral Response Range: 200-1000 nm

Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation

Type: Photodiodes
Sensor Width: 21.56
Sensor Height: 15.36
Light Spectrum: UV,VIS,NIR,Multispectral
Breakdown Voltage: 5 V, min.; 25 V typical
Capacitance: 25 nF, typical.; 40 nF, max.
Detection: Radiation, Electrons, Photons

Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation

Type: Photodiodes
Sensor Width: 576.5
Sensor Height: 576.5
Light Spectrum: XRAY,Multispectral
Large, Square Active Area: 576.5 mm x 576.5 mm
Lead-SolderingTemperature: 260 °C
Min. Reverse Breakdown: 5V

Photodiode UVG20C
Opto Diode Corporation

Type: Photodiodes
Light Spectrum: UV
Capacitance: 4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.): 19 mm²
Internal Quantum Efficiency: 100%

Photodiode - AXUV20A
Opto Diode Corporation

Type: Photodiodes
Sensor Width: 5.5
Sensor Height: 5.5
Light Spectrum: UV,VIS,NIR
Capacitance: 4 nF, typical.; 10 nF, max.
Circular Photodiode: 5.5 mm²
Detection: Radiation, Electron, Photon

Photodiode - AXUV20HS1
Opto Diode Corporation

Type: Photodiodes
Light Spectrum: XRAY
Electron Detection: 200 eV
Grid lines: 5 µm
High-Speed Circular Active Area: 5 mm Ø

S13255-2048-02 CCD Linear Image Sensor
Hamamatsu Corporation

Type: CCD
Max. Resolution: 2KP
Scan Type & Rate: Linear
kHz at Max. Res.: 10000
Light Spectrum: UV,VIS,NIR,SWIR
Number of Pixels: 2048
Pixel Size: 14 µm x 500 µm
Spectral Response Range: 200-1100 nm

CMOS/Microelectronics
CMC Microsystems

Type: CMOS

10GHz High Speed Photodetector
Beijing Rofea Optoelectronics Co. Ltd.

Type: Equipment
-3dB Bandwidth: 10GHz
Spectral range: 850~1650nm

BPR Series 200M Balanced Light Detection Module
Beijing Rofea Optoelectronics Co. Ltd.

Type: InGaAs
Max. Resolution: 200MP
Light Spectrum: XRAY,UV,VIS,NIR,SWIR,MWIR,LWIR,FIR,Multispectral
3dB bandwidth: 200MHz
Material type: InGaAs/Si

S50S/UA50
Crydet Ltd.

Type: Equipment
Diameter: 58 mm
Length (with pins): 200 mm
PHR (Cs137): 7.5

Cerium doped Yttrium Aluminum Garnet
Luxium Solutions

Type: UV
Light Spectrum: UV
Decay Time (ns): 70
Density (gms/cm3): 4.55
Emission Wavelength (nm): 550

APD10G1
Albis Optoelectronics AG

Type: Photodiodes
Light Spectrum: NIR
Optical damage threshold: up to +5 dBm
Receiver sensitivity: –34.5 dBm
Responsivity: 10 A/W

PQS40A-L
Albis Optoelectronics AG

Type: Photodiodes
Light Spectrum: NIR
Bandwidth: 40 GHz
Responsivity: 0.8 A/W

Photodiode - APX 158-03-007
Advanced Photonix

Type: InGaAs
Sensor Width: 3.375
Sensor Height: 3.375
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 3 kΩ

Photodiode - APX 158-02-003
Advanced Photonix

Type: InGaAs
Sensor Width: 2.25
Sensor Height: 2.25
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 2.2 kΩ

Mulit-Element Arrays
OSI Optoelectronics Inc.

Type: Photodiodes
Scan Type & Rate: Linear
Light Spectrum: UV,VIS,NIR
UV-Enhanced: A5V-35UV

High-Speed Silicon Photodiodes
OSI Optoelectronics Inc.

Type: Photodiodes
Scan Type & Rate: Area
Light Spectrum: UV,VIS,NIR
350 to 1100: nm
Package: TO=46
Peak Responsivity: 0.50A/W @ 800 nm

4x4 Silicon Array Detectors
OSI Optoelectronics Inc.

Type: Photodiodes
Scan Type & Rate: Area
Light Spectrum: VIS,NIR
Active Area: 1.96 mm²
Capacitance: 75
Dimensions: 1.4 x 1.4 mm

2-Color Sandwich Detectors
OSI Optoelectronics Inc.

Type: Photodiodes
Light Spectrum: VIS,NIR
Operation: Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_): 400-1800 nm
Spectral Range Silicon/InGaAs: 400-1800 nm

Nd:YAG 1064-nm Optimized Photodetectors
OSI Optoelectronics Inc.

Type: IR
Light Spectrum: VIS,NIR
5 to 14 mm Active area: diameters
Nd:YAG: sensitivity

HI-Q™ OEO
OEwaves Inc.

Type: Other

QE25LP-S-MB Laser Energy Detector
Gentec Electro-Optics Inc.

Type: Portable
Max. Measurable Energy: 3.8J
Beam Diameter: 25mm
Wavelength Range: 0.193 - 20µm
Max. Frequency: 300Hz
Measure Power?: No
Maximum Average Power Density: 10 W/cm²
Maximum Energy Density: 0.6 J/cm²
Maximum Power: 5 W

Laser Beam Profiler BEAMAGE-4M
Gentec Electro-Optics Inc.

Type: Camera
Wavelength Range: 350 - 1150nm
Max. Beam Diameter: 20.5mm
Interface: USB 2.0,USB 3.0
Maximum Energy Density: 100 µJ/cm²
Maximum Power: 1 W
Maximum Power Density: 10 W/cm²

UP19K-15S-H5 Laser Power Detector
Gentec Electro-Optics Inc.

Type: Post Mounted
Max. Measurable Energy: 15J
Beam Diameter: 19mm
Measure Power?: Yes
Max. Measurable Power: 15W
Max Avg. Power (1 minute): 30 W
Max Avg. Power (continuous): 15 W
Max Avg. Power Density: 36 kW/cm²

PRONTO-250 Portable Laser Power Meter
Gentec Electro-Optics Inc.

Type: Portable
Wavelength Range: 0.193 - 20µm
Measure Power?: Yes
Max. Measurable Power: 250W
Aperture Diameter: 19 mm
Exposure Time: 5 s
Maximum Average Power Density: 45 kW/cm²

MAESTRO Laser Power Meter
Gentec Electro-Optics Inc.

Type: Portable
Max. Measurable Energy: 30kJ
Measure Power?: Yes
Device Accuracy: 0.25 % ± 5 µV best scale
Energy Range: 2 fJ to 30 kJ
Power Range (photodetector): 4 pW - 3 W

sCMOS Image Sensor Sockets
Andon Electronics Corp.

Type: Component

EMCCD Image Sensor Sockets
Andon Electronics Corp.

Type: Component

CMOS Image Sensor Sockets
Andon Electronics Corp.

Type: Component

CCD Image Sensor Sockets
Andon Electronics Corp.

Type: Component

PTC Thermistor
Amwei Thermistor Sensor Co. Ltd.

Type: Equipment
Reference Temp.: 80 °C, 100 °C, 120 °C
Resistance @25 °C: 70 ohm - 4700 ohm
Withstanding Voltage: 420 - 1000 V

kSA 400
k-Space Associates Inc.

Type: Other

7558 Series Laser Rangefinder Receiver/Processor
Analog Modules Inc.

Type: Other
Sensor Width: 80
Scan Type & Rate: Linear
Light Spectrum: SWIR
Min./Max. Range: 50 m to 65 km
Multiple Target Resolution: 10 m typical
Range Accuracy: 1 m rms

HS Series
Changchun New Industries Optoelectronics Technology Co. Ltd.

Type: Portable
Beam Diameter: 8.5mm
Wavelength Range: 0.19 - 15µm

Sensing & Detection Products