Teledyne DALSA - Line Scan Leader 5/24 LB

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18 products

Sensing & Detection

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Photodiode NXIR-RF36
Opto Diode Corporation

Type: Photodiodes
Active Area: 5 mm²
Responsivity @1064 nm: 0.38 A/W
Responsivity @850 nm: 0.65 A/W

Photodiode NXIR-RF100C
Opto Diode Corporation

Type: Photodiodes
Light Spectrum: NIR
Active Area: 1 mm²
Responsivity @1064 nm: 0.35 A/W
Responsivity @850 nm: 0.62 A/W

IR Detector BXF-2
Opto Diode Corporation

Type: IR
Sensor Width: 2
Sensor Height: 2
Active Element Area: 4 mm²
Element Operating Temp.: +23 °C
Peak Sensitivity (min.): 3.6 µm

IR Detector - BXP-25E
Opto Diode Corporation

Type: IR
Light Spectrum: NIR
Active Area: 4 mm²
Detectivity (D*) Ranges: 2.0 × 10(10) (D*)
Material: PbSe

IR Detector - BXT2S-38T
Opto Diode Corporation

Type: IR
Light Spectrum: VIS,NIR
Active Area: 9 mm²
Material: PbSe
ResponseTime: 12 µsec

Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.

Type: IR
Light Spectrum: SWIR,MWIR
D*: 1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model: 2.5 M Ohm typ
Delta T for TEC: 50 °C

FPA0320P30F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Max. Resolution: 0.32MP
Sensor Width: 320
Sensor Height: 256
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 346
Light Spectrum: SWIR
Effective Pixel Array: 318x254
Operating Temperature: +71~-40°C
Outputs: 1/2/4

FPA0320P30F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Max. Resolution: 0.32MP
Sensor Width: 320
Sensor Height: 256
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 346
Light Spectrum: SWIR
Effective Pixel Array: 318×254
Operating Temperature: +71~-40°C
Outputs: 1/2/4

S10226-10 CMOS Linear Image Sensor
Hamamatsu Corporation

Type: CMOS
Max. Resolution: 1KP
Scan Type & Rate: Linear
kHz at Max. Res.: 200
Light Spectrum: UV,VIS,NIR,SWIR
Number of Pixels: 1024
Pixel Size: 7.8 um x 125 µm
Spectral Response Range: 400-1000 nm

C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.

Type: Photodiodes

Photodiode NXIR-5C
Opto Diode Corporation

Type: Photodiodes
Light Spectrum: NIR
Active Area (circular): 5 mm²
Responsivity @ 1064 nm: 0.35 A/W
Responsivity @850 nm: 0.62 A/W

InGaAs Avalanche Photodiode
Chunghwa Leading Photonics Tech Co. Ltd.

Type: InGaAs
Light Spectrum: SWIR
Aperture Size: Ø 200 μm
Package Type: TO-46 / 5P
Spectral Range: 0.95 - 1.65 μm

Photodiode - APX 158-03-007
Advanced Photonix

Type: InGaAs
Sensor Width: 3.375
Sensor Height: 3.375
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 3 kΩ

Photodiode - APX 158-02-003
Advanced Photonix

Type: InGaAs
Sensor Width: 2.25
Sensor Height: 2.25
Scan Type & Rate: Linear
Light Spectrum: VIS,NIR,SWIR
Breakdown Voltage: 9 (typ.) V
Dark Current: 2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts): 2.2 kΩ

GSENSE5130
Gpixel Inc.

Type: sCMOS
Max. Resolution: 15MP
Sensor Width: 42.5
Sensor Height: 38.1
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 268
Light Spectrum: VIS
Dark Noise: 1.2e-
Dynamic Range: 81 dB
Pixel Size: 4.25 µm

Silicon Photomultipliers (SiPMs)
First Sensor Inc.

Type: Other
Light Spectrum: VIS,NIR

FPA320x256-K
ANDANTA GmbH

Type: InGaAs
Max. Resolution: 82KP
Sensor Width: 9.6
Sensor Height: 7.68
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 356
Light Spectrum: NIR,SWIR
Package Type: 28-pin metal DIP package
Pixel Size: 30 μm × 30 μm
Spectral Range: 0.9 μm - 1.7 μm

FPA320x256-K-2.2-TE2
ANDANTA GmbH

Type: InGaAs
Max. Resolution: 82KP
Sensor Width: 9.6
Sensor Height: 7.68
Scan Type & Rate: Area
Frames (fps) at Max. Res.: 356
Light Spectrum: NIR,SWIR
Package Type: 28-pin metal DIP package
Pixel Pitch: 30 μm × 30 μm
Spectral Range: 1.2 μm - 2.2 μm

Sensing & Detection Products

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