The S7998 silicon photodiode from Hamamatsu Corp. integrates a low-bias-current preamplifier in a ceramic 13.2 x 7.37-mm package. A metal package also is available for specific design requirements. This device requires 5 V, achieves a peak sensitivity of 0.43 A/W at 880 nm and has a typical dark current of 50 pA. The company says it delivers low noise, high feedback resistance and low current consumption over the 190 to 1100-nm spectral response range. The photodiode is suitable for high-precision photometry applications from the UV to the near-IR.