Dec 2003Cree Inc.Request Info
Cree Inc. has unveiled its XThin next-generation solid-state high-intensity LED emitters that combine InGaN materials with a proprietary silicon carbide substrate. The vertically structured LED chips measure 115 µm high and require low forward voltage and a single wire bond connection. They have a geometrically enhanced epi-down design that maximizes light extraction efficiency for improved white light conversion. The chips are tested for conformity to optical and electrical specifications and for the ability to withstand 1000-V electrostatic discharge. Applications include use in the LCD backlights of mobile appliances, and in digital camera flash where brightness, subminiaturization and low power consumption are required.