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PHOTODIODE

Photonics Spectra
Oct 2004
Hamamatsu CorporationRequest Info
 
Hamamatsu Corp. has unveiled the S9089, a silicon photodiode that is designed with a quartz window hermetically sealed to its TO-8 metal package to increase its sensitivity to vacuum-UV light. The device covers from 190 to 1000 nm and achieves peak sensitivity of 0.06 A/W at 193 nm. Dark current is, typically, 0.02 nA, rise time is 2 µs, and operating temperature is from 240 to 100 °C. It is 19.45 mm high and has a 13.9-mm diameter and an active area of 5.8 × 5.8 mm.


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GLOSSARY
quartz
See crystal quartz; fused quartz.
silicon photodiode
Semiconductor PN or PIN junction that uses absorbed photon energy in the range of 1.06 to 1.03 eV to excite carriers from one energy level to a higher state. The resultant change in the charge across the junction is monitored as a current in the external photodiode circuit.
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