A manufacturing partnership between Eblana Photonics Ltd. and Vitesse Semiconductor Corp. is producing low-threshold, high-quality, single-mode laser diodes on Vitesse's 4-in. indium phosphide (InP) integrated circuit fabrication line. Using established tool sets and processes, the companies are making 2.5-Gb/s, single-wavelength laser diodes that exhibit lasing emission at 1.54 µm, with threshold currents of 12 mA at 25 °C. Side mode suppression ratios are >40 dB, with optical emission powers of 20 mW into a single lasing mode. Vitesse is combining its own standard VIP-2 InP heterojunction bipolar transistor process with Eblana's regrowth-free laser technology platform.