Optek Technology Inc., a subsidiary of TT electronics plc, has developed a silicon phototransistor in a 0.10 × 0.08-in. surface-mount package. The OP570 series NPN phototransistors have an integral infrared-transmissive lens for high-performance operation. Collector-emitter breakdown voltage is 30 V, emitter-collector breakdown voltage is 5 V, collector current is 20 mA, and power dissipation is 130 mW. Minimum on-state collector current is 2.5 mA, and maximum collector-emitter dark current is 100 nA. The RoHS-compliant devices are compatible with 260 °C lead-free soldering processes. Available in four lead configurations, they operate from –25 to 85 °C.