Crystal IS Inc. has made available its ultralow-defect density (typically in the range of 1000/cm2) 2-in. native aluminum nitride (AlN) wafers for the AlN/AlGaN market. The substrates are suitable for UV solid-state lighting and lasers, next-generation high-power radio-frequency transistors, and UV optoelectronics. The company uses the patented technique of sublimation-recondensation for bulk AlN crystal growth to manufacture the 2-in. substrates. With a low thermal mismatch and no lattice mismatch to the AlN/AlGaN device layers, the substrates are not affected by the stresses associated with other materials, and they benefit from high thermal conductivity.