A near-IR linear-mode avalanche photodiode (APD) design that combines the noise characteristics of silicon with the near-IR sensitivity of InGaAs has been demonstrated by Voxtel Inc. The device exhibits gains above 2000 and an excess noise characteristic of k = 0.02. When coupled to low-noise amplifiers, it enables linear-mode photon counting. It produces far less dead time than do APDs operated in Geiger mode, enabling bandwidths >1 GHz. It can be cooled to reduce the dark count rate without the harmful side effects associated with Geiger-mode afterpulsing.