Request InfoTower Semiconductor Ltd.An image sensors platform that adds advanced imaging capabilities to the base of its 0.18-μm technology has been announced by Tower Semiconductor Ltd. Produced in the company’s Fab2 facility, the 2.2-μm pixel produces <1.5 e/s dark current and 9 e/s dark signal nonuniformity at room temperature. The company says that the pixel exhibits good noise and dark current performance even at elevated temperatures. With the availability of smaller pixels, designers can increase a camera’s resolution without increasing its size. The 2.2-μm pixel is being used in the development of...See full productRelated content from Photonics MediaPRODUCTSPhotonics Spectra November 2023 IssueLight Detection ModuleThe ROF-PD-10G 10 GHz High-Speed Light Detection Module from Beijing Rofea Optoelectronics Co. 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