Hamamatsu Corp. has launched silicon avalanche photodiodes for 800-nm measurements. The S10341 series devices offer high sensitivity at 800 nm, making them suitable for use in optical rangefinders, laser radar and free-space optics. They exhibit a quantum efficiency of 75% at 800 nm and are sensitive between 400 and 1000 nm. Features include low noise, high-speed response and stable operation at low bias. The package measures 1.8 x 3.1 x 1 mm. The S10341-02’s photosensitive area has a 0.2-mm diameter. At 100x gain, it has a typical cutoff frequency of 1000 MHz and 50-pA dark current. The S10341-05 has a photosensitive area measuring 0.5 mm in diameter. Its typical cutoff frequency and dark current are 900 MHz and 100 pA, respectively, at 1003 gain.