NEWBURY PARK, Calif., April 16, 2012 — Opto Diode, a division of ITW, has introduced the third in its family of three super-high-power infrared emitters. Based on gallium aluminum arsenide (GaAlAs) technology, the OD-250 features a wide-angle, uniform optical beam with ultrahigh optical output. Typical total power output is 250 mW, with a minimum of 160 mW. Peak emission wavelength is 850 nm, making the emitter suitable for imaging in military and security applications. It has a spectral bandwidth of 40 nm at 50% with a half-intensity beam angle at 110°. It is durable, with gold-plated metal surfaces and four wire bonds on die corners for redundancy. The standard three-lead TO-39 package can be stored and/or operated in extreme temperatures ranging from −40 to 100 °C, with maximum junction temperature at 100 °C. It features rise times of 20 ns and fall times of 20 ns. The emitter is designed for use in night-vision imaging technology, such as cameras and/or goggles, and for integration into illuminators and markers.