Opto Diode Corp. has introduced the third in its line of superhigh-power infrared emitters. Based on gallium aluminum arsenide technology, the OD-250 features a wide-angle, uniform optical beam with ultrahigh optical output. Typical total power output is 250 mW, with 160 mW minimum. Peak emission wavelength is 850 nm, making the emitter suitable for imaging in military and security applications. It has a spectral bandwidth of 40 nm at 50% with a half-intensity beam angle at 110°. It is durable, with gold-plated metal surfaces and four wire bonds on die corners. The three-lead TO-39 package can be stored and operated in temperatures from 240 to 100 °C, with maximum junction temperature at 100 °C. Rise and fall times are 20 ns. The emitter is used in night-vision imaging technology, such as cameras and goggles, and integrated into illuminators and markers.