800-nm Silicon Avalanche Photodiodes
Oct 2012OSI Optoelectronics Inc.Request Info
HAWTHORNE, Calif., Oct. 15, 2012 — OSI OptoElectronics Inc. has introduced the APD Series 8-150, a line of silicon avalanche photodiodes optimized for operation in the 800-nm wavelength region.
Available in hermetically sealed metal packages, the devices offer low noise and high sensitivity over bandwidths up to 1 GHz. They feature 0.2-, 0.5-, 1- and 1.5-mm-diameter active areas and exhibit low temperature coefficients of 0.45/V °C, making them suitable for optical fiber communications, laser rangefinder and high-speed photometry applications.
Storage temperature is from −55 to 125 °C, and operating temperature ranges from −40 to a maximum of 100 °C.