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Semiconductor Failure Analysis

FEI Life Sciences

HILLSBORO, Ore., Nov. 21, 2012 — For semiconductor failure analysis, FEI has released its Helios NanoLab 450 F1 DualBeam, a system that provides manufacturers with faster, better images of their device architectures. A scanning transmission electron microscope (STEM) detector delivers improved contrast between materials, and the new flip stage and rotating nanomanipulator support advanced preparation techniques for complex device architectures, such as finFETs and 3-D memory structures.

Dual-beam instruments combine a scanning electron microscope for imaging and a focused ion beam for milling and deposition. Dual beams also provide STEM imaging capability by adding a detector for collecting transmitted electrons below the sample. Applications include preparation of the ultrathin samples required for transmission electron microscope analysis.

The STEM detector delivers higher resolution and better material contrast. The FlipStage 3 quickly flips the sample between thinning and STEM viewing positions, and a new rotation axis permits viewing from either side of the section. The EasyLift nanomanipulator provides precise motorized sample manipulation, including rotation, to support automated “lift out” and advanced preparation procedures, such as inverted thinning. The MultiChem gas injector system provides flexibility in gas-assisted milling and deposition, while cutting maintenance costs with prefilled crucibles.


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