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SiC MOSFET

Photonics.com
Apr 2013
Cree Inc.Request Info
 
DURHAM, N.C., April 5, 2013 — Cree Inc.’s second-generation silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) delivers higher efficiency in a smaller size.

The 1200-V MOSFETs enable system operation at higher switching frequencies, resulting in smaller passive components, especially smaller inductors, and a 50% to 70% reduction in current in some high-power applications.

For solar inverters and uninterruptible power supply (UPS) systems, the efficiency improvement is accompanied by size and weight reductions. In motor drive applications, the power density can be more than doubled, while increasing efficiency and providing up to twice the maximum torque of similarly rated silicon solutions.

Dies are available with ratings of 25-m ohms, intended as a 50A building block for high-power modules, and of 80-m ohm. The 80 mOhm MOSFET, in a TO-247 package, performs better than the first-generation CMF20120D.


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