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AXUV20ELG 20-Element Photodiode

Photonics.com
Jul 2013
Opto Diode CorporationRequest Info
 
NEWBURY PARK, Calif., July 22, 2013 — Opto Diode Corp., a division of ITW, has released the 20-element AXUV20ELG photodiode, which features a 22-pin, dual in-line package with 100% internal quantum efficiency for applications in bolometry and electron detection.

The device provides extreme UV-UV and UV-VIS-NIR photon responsivity, and includes an active area of 0.75 × 4.1 mm and a sensitive area of 3 mm² per element. The reverse breakdown voltage is typically 25 V, and the capacitance is 40 pF maximum at 25 °C per element. With a rise time of 200 ns and shunt resistance per element at a minimum 100 MΩ, the device provides stable response after exposure to high-energy radiation.

Ambient storage and operating temperatures range from –10 to 40 °C, and nitrogen or vacuum storage/operation temperatures range from –20 to 80 °C. The lead-soldering temperature is 260 °C with a maximum junction temperature at 70 °C.


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