NEWBURY PARK, Calif., Aug. 23, 2013 — Opto Diode has introduced the OD-669-850 high-power GaAlAs IR LED illuminator for night-vision illumination tasks. It features optical output from 800 to 1250 mW, typical, and a peak emission wavelength of 850 nm. Its operating and storage temperatures range from −40 to 100 °C, with a maximum junction temperature of 100 °C. Power dissipation (under absolute maximum ratings at 25 °C) is 6 W, with a continuous forward current of 370 mA, a peak forward current of 1 A, and reverse voltage at 5 V. The lead soldering temperature (at 1/16 in. from case for 10 seconds) is 260 °C. The device provides a uniform optical beam. Its spectral bandwidth at 50% is typically 40 nm, and the half-intensity beam angle is 120°. All surfaces on the standard two-lead, TO-66 electrically isolated package are gold plate.