BOHEMIA, N.Y., Sept. 23, 2013 — Photonics Industries (PI) has introduced the DM100-527 Q-switched, intracavity Nd:YLF laser for applications ranging from ultrafast Ti:sapphire amplifier pumping and particle image velocimetry to annealing semiconductor materials for the power industry. The device produces a pulse energy of 100 mJ at 1 kHz and 50 mJ at 3 kHz; PI’s patented twin-pulse feature enables the laser to achieve 50 mJ with a single head rather than dual head formerly required. On a dual-head configuration, this pulse energy is scalable to 200 mJ. The laser offers beam quality of M2 ~9 to 15, rendering it suitable for ultrafast pumping. The large thermal lensing tolerance range of the DM series allows repetition rates to be changed more easily (i.e., from 1 to 10 kHz). Users can vary the repetition rates from the front panel.