Close

Search

Search Menu
Photonics Media Photonics Buyers' Guide Photonics EDU Photonics Spectra BioPhotonics EuroPhotonics Industrial Photonics Photonics Showcase Photonics ProdSpec Photonics Handbook
More News
SPECIAL ANNOUNCEMENT
2016 Photonics Buyers' Guide Clearance! – Use Coupon Code FC16 to save 60%!
share
Email Facebook Twitter Google+ LinkedIn

UVG20C 20-mm² Photodiode

Photonics.com
Oct 2013
Opto Diode CorporationRequest Info
 
NEWBURY PARK, Calif., Oct. 10, 2013 — Opto Diode, a member of the ITW Photonics Group, has released the UVG20C, a 20-mm2 photodiode with a circular active area for electron detection.

The absence of a surface dead region results in 100 percent collection efficiency. The radiation-hard, junction-passivating oxynitride protective entrance window makes the device better suited than conventional silicon photodiodes for space missions and/or satellite applications (<2% responsivity degradation after megajoules per square centimeter of 254-nm and tens of kilojoules per square centimeter of 193-nm photon exposure).

The device features a rise time of 1.7 µs (typical), a minimum rise time of 0.8 µs and a maximum of 3.3 µs. The shunt resistance is 200 MΩ (typical), 50 MΩ (minimum), and the typical capacitance is 4 nF and maximum 10 nF. Housed in a TO-8 package, it offers peak responsivity of 800 nm at ~0.56 A/W.


REQUEST INFO ABOUT THIS PRODUCT

* Message:
(requirements, questions for supplier)
Your contact information
* First Name:
* Last Name:
* Email Address:
* Company:
Address:
Address 2:
City:
State/Province:
Postal Code:
* Country:
Phone #:
Fax #:

Register or login to auto-populate this form:
Login Register
* Required
Terms & Conditions Privacy Policy About Us Contact Us
back to top

Facebook Twitter Instagram LinkedIn YouTube RSS
©2016 Photonics Media
x We deliver – right to your inbox. Subscribe FREE to our newsletters.