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Silicon Avalanche Photodiodes

Photonics.com
Jun 2015
Marktech OptoelectronicsRequest Info
 
LATHAM, N.Y., June 5, 2015 — Marktech Optoelectronics avalanche photodiodesMarktech Optoelectronics has announced a new line of silicon avalanche photodiodes (APDs) with an internal gain mechanism, fast time response, low dark current and high sensitivity in the near-infrared region.

The devices are the preferred optical detectors for applications where the wavelength lies between 400 and 1100 nm. Standard versions are available in 200, 500 and 800 μm and are offered in hermetic transistor outline (TO) cans and cost-effective leadless chip carrier (LCC) packages.

The detectors have become the semiconductor equivalent of photomultipliers in many applications, including data communications, lidar, instrumentation and photon counting.


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