HAWTHORNE, Calif., Sept. 1, 2015 — The BI-SMT photodetector series from OSI Optoelectronics Inc. features single-channel, back-illuminated silicon photodiodes specifically designed to minimize dead areas on the edges of devices. Each photodiode is designed on a square surface-mount package with dimensions similar to the actual chip, making it possible for multiple detectors to be arranged in a tiled pattern for easy scintillator coupling. The 33BI-SMIT features an area of 5.76 mm2, while the 55BI-SMIT has a 19.36-mm2 active area, and the 1010BI-SMT features an 88.36-mm2 active area. The typical peak spectral responsivity for all three photodiodes is 920 nm. Applications include x-ray inspection, computed tomography and general industrial tasks.