Jan 2016Opto Diode CorporationRequest Info
CAMARILLO, Calif., Jan. 29, 2016 — Opto Diode Corp. has announced the NXIR series of photodiodes, designed for back-facet laser-monitoring applications that require improved performance in the NIR spectrum from 700 to 1100 nm.
The NXIR-RF36 and NXIR-RF70 near-infrared/red-enhanced models offer reduced footprints, and are ideally suited for integration with semiconductor devices including Fabry-Perot, distributed feedback and vertical-cavity surface-emitting lasers. The devices have a high responsivity of 0.65 A/W at 850 nm, low capacitance of 5 pF at 0 V and high shunt resistance.
The NXIR-RF36 has an active area of 0.36 mm2, while the NXIR-RF70 has an active area of 0.7 mm2. The detectors are available in a waffle pack or dicing tape for high-volume shipments.
The NXIR-5W is designed for high-power-laser monitoring that requires high responsivity in the NIR spectrum. It can be utilized with YAG lasers used in biological, dental, medical, fluid dynamics, manufacturing and military applications. It has high responsivity at 1064 nm with a low reverse bias voltage of 10 V. Other features include high responsivity of 0.45 A/W at 1064 nm, low dark current of 1 nA and low capacitance of 10 pF.
The devices are designed to maximize measurement repeatability and reliability in high-powered UV laser-monitoring systems with products optimized for near-infrared wavebands.