Avanex Corp. has unveiled the PowerIntense 1999 family of 980-nm single-mode pump laser diodes. The LCV1 and LCV2 pump laser chips and chips on carriers are fabricated using a metallorganic chemical vapor deposition-grown strained quantum well active region. Typical nominal powers at 25 °C are 450 and 900 mW, respectively, with maximum threshold currents of 65 and 80 mA. Maximum forward voltage for the former at 600 mA is 1.8 V and, for the latter at 1200 mA, 1.7 V. Operating temperature for both is from 0 to 75 °C. The LCV1, exhibiting beam divergence of 7° × 22°, is suitable for direct diode frequency doubling, laser seeding and low-noise broadband erbium-doped fiber amplifier applications. The LCV2 has a beam divergence of 8.5° × 20°, and it is suitable for medical, printing, inspection and metrology applications.

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