An image sensors platform that adds advanced imaging capabilities to the base of its 0.18-μm technology has been announced by Tower Semiconductor Ltd. Produced in the company’s Fab2 facility, the 2.2-μm pixel produces <1.5 e/s dark current and 9 e/s dark signal nonuniformity at room temperature. The company says that the pixel exhibits good noise and dark current performance even at elevated temperatures. With the availability of smaller pixels, designers can increase a camera’s resolution without increasing its size. The 2.2-μm pixel is being used in the development of small VGA sensors through 3-megapixel ones for cell phones and 5-megapixel ones for digital still cameras.

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