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  • gallium arsenide (GaAs) injection laser

A laser system consisting of a planar PN junction within a single crystal of gallium arsenide. The pair of parallel, semireflective end faces produces a Fabry-Perot resonant cavity, whereas the other faces are sawed to suppress all except the modes that propagate between the end faces. The lasing occurs in the modes that have the maximum optical gain and the least optical loss.
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