Mid-IR Detector Operates at Room Temperature
A PIN photodiode under development in France at
Thomson-CSF of Orsay and
École Polytechnique of Palaiseau may challenge the place of thermal imagers such as microbolometers and pyroelectric devices in IR sensing applications. The researchers suggest that the InAsSb device, unlike other mid-IR photovoltaic detectors, will operate in the 3- to 5-µm atmospheric window without cooling.
Reporting in the July 17 issue of
Applied Physics Letters, the researchers used a molecular beam epitaxy system with reflection high-energy-electron diffraction to grow the detector. They suggest that increasing the gap of the n-doped barrier and using back illumination will improve the detectivity of the device at 300 K, which was measured at 3.39 µm and 250 K.
LATEST NEWS
- 3D Printing High Quality Optics with Blurred Light
May 20, 2024
- Photon Momentum Creates Electron Interaction for Use in Optoelectronics
May 20, 2024
- Active Surfaces Secures $5.6M in Funding for Solar Tech: Week in Brief: 5/17/24
May 17, 2024
- Quantum State Opens Possibility for Advances in Optoelectronics
May 17, 2024
- LED Display Guides Surgery with Real-Time Visuals of Brain Activity
May 16, 2024
- George Mason University Receives Air Force Funding for Imaging, Digital Twins Lab
May 16, 2024
- Intel Appoints Vice President, General Manager of Foundry Arm: People in the News: 5/15/24
May 15, 2024
- Agreements Fortify NVIDIA's Role as Global Partner in Quantum Supercomputing
May 15, 2024