AIXTRON, Yale to Research GaN Technology

AACHEN, Germany & NEW HAVEN, Conn., Feb. 28 -- Semiconductor epitaxial equipment supplier AIXTRON AG announced it has received a contract from Yale University for an AIX 200/4 RF-S MOCVD system, and for joint cooperation in the research and development of GaN technology for novel devices and structures for opto-electronic applications based on AIXTRON's HeteroWafer technology.





LATEST NEWS

• IPG Names Industry Veteran Mark Gitin CEO
  Apr 30, 2024
• 16th Biannual Optatec Conference Continues in Frankfurt
  Apr 30, 2024
• Celestial Surface Mapping Tech Combines Established Techniques
  Apr 30, 2024
• TSMC Partnerships Target Integrated Photonics Capabilities
  Apr 30, 2024
• CLEO Heads to the East Coast
  Apr 29, 2024
• Laser-Based Gas Analyzer Developed to Detect Air Pollution
  Apr 29, 2024
• Qubits Could be Stored in Flash-Like Memory
  Apr 29, 2024
• Exail Signs LLNL Contract, Partners with Eelume
  Apr 26, 2024