AlGaN Displays Efficient UV Emission
A Japanese research team from
Riken in Saitama,
Waseda University in Tokyo and
Tokyo Institute of Technology in Yokohama reported in the Jan. 7 issue of
Applied Physics Letters that it has achieved 230- to 280-nm emission from AlGaN-based quantum wells, with efficiencies at 77 K as high as those of InGaN-based quantum wells.
The researchers grew the multiple-quantum-well structures on a SiC substrate using metallorganic vapor phase epitaxy. A xenon lamp producing 215- or 227-nm radiation and a 257-nm argon-ion laser served as the excitation sources for the samples.
They suggest that reducing the threading dislocation density on the AlGaN buffer will improve performance at room temperature. The UV emitters could find applications in optical memory storage and solid-state lighting.
LATEST NEWS
- CLEO Heads to the East Coast
Apr 29, 2024
- Laser-Based Gas Analyzer Developed to Detect Air Pollution
Apr 29, 2024
- Qubits Could be Stored in Flash-Like Memory
Apr 29, 2024
- Exail Signs LLNL Contract, Partners with Eelume
Apr 26, 2024
- Menlo Moves U.S. HQ: Week in Brief: 4/26/2024
Apr 26, 2024
- Optofluidics Platform Keys Label-, Amplification-Free Rapid Diagnostic Tool
Apr 25, 2024
- DUV Lasers Made with Nonlinear Crystals Enhance Lithography Performance
Apr 25, 2024
- Teledyne e2v, Airy3D Collaborate on 3D Vision Solutions
Apr 24, 2024